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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVINCENT, B; LOO, R; VANDERVORST, W et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2671-2676, issn 0022-0248, 6 p.Article

High Ge content SGOI substrates obtained by the Ge condensation technique : A template for growth of strained epitaxial GeSOURIAU, L; TERZIEVA, V; VANDERVORST, W et al.Thin solid films. 2008, Vol 517, Num 1, pp 23-26, issn 0040-6090, 4 p.Conference Paper

PMOS transistor with embedded SiGe : Elastic and plastic relaxation issuesHIKAVYY, A; BHOURI, N; LOO, R et al.Thin solid films. 2008, Vol 517, Num 1, pp 113-116, issn 0040-6090, 4 p.Conference Paper

Selective epitaxial Si/SiGe growth for V_T shift adjustment in high k pMOS devicesLOO, R; SORADA, H; INOUE, A et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S110-S113Conference Paper

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface qualityLEYS, F. E; BONZOM, R; DILLIWAY, G et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 679-684, issn 1369-8001, 6 p.Conference Paper

Properties of Hfta_xO_y high-k layers deposited by ALCVDZHAO, C; RITTERSMA, Z. M; TOIS, E et al.Proceedings - Electrochemical Society. 2005, pp 133-140, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p⁺ poly-Si_1-xGe_x and poly-Si gate materialsJACOB, A. P; MYRBERG, T; NUR, O et al.Semiconductor science and technology. 2002, Vol 17, Num 9, pp 942-946, issn 0268-1242Article

Porous silicon as an intermediate layer for thin-film solar cellBILYALOV, R; STALMANS, L; BEAUCARNE, G et al.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, pp 477-485, issn 0927-0248Conference Paper

Etude de l'alliage SiGe pour application au photovoltaïque = SiGe alloy study photovoltaic applicationDAAMI, A; BREMOND, G; POORTMANS, J et al.Journées nationales de microélectronique et optoélectronique. 1999, 2Vol, 2 p.Conference Paper

Degradation of SiGe devices by proton irradiationOHYAMA, H; VANHELLEMONT, J; TAKAMI, Y et al.Radiation physics and chemistry (1993). 1997, Vol 50, Num 4, pp 341-346, issn 0969-806XConference Paper

Spectroellipsometric characterisation of thin epitaxial Si₁^-_xGe_x layersLIBEZNY, M; CAYMAX, M; BRABLEC, A et al.Materials science and technology. 1995, Vol 11, Num 10, pp 1065-1070, issn 0267-0836Conference Paper

Spectroscopic ellipsometry of strained Si_1-xGe_x layersLIBEZNY, M; POORTMANS, J; CAYMAX, M et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 158-161, issn 0040-6090Conference Paper

Thin film solar cells from directionally solidified polycrystalline silicon doped with B, Al, Cu and CKISHORE, R; PASTOL, J.-L; BARBE, M et al.Photovoltaic specialists conference. 19. 1987, pp 1271-1274Conference Paper

Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substratesHARADA, S; KIKKAWA, J; NAKAMURA, Y et al.Thin solid films. 2012, Vol 520, Num 8, pp 3245-3248, issn 0040-6090, 4 p.Conference Paper

Atomic layer deposition of Al₂O₃ on S-passivated GeSIONCKE, S; CEUPPENS, J; LIN, D et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1553-1556, issn 0167-9317, 4 p.Conference Paper

Experimental and theoretical study of Ge surface passivationHAUSSA, M; POURTOIS, G; HEYNS, M. M et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2267-2273, issn 0167-9317, 7 p.Conference Paper

High-k gate stack engineering : Towards meeting low standby power and high performance targetsDE GENDT, S; BRUNCO, D; KAUSHIK, V et al.Proceedings - Electrochemical Society. 2005, pp 109-117, issn 0161-6374, isbn 1-56677-463-2, 9 p.Conference Paper

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Successful selective epitaxial Si_1-xGe_x deposition process for HBT-BiCMOS and high mobility heterojunction pMOS applicationsLOO, R; CAYMAX, M; PEYTIER, I et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 10, pp G638-G647, issn 0013-4651Article

Characterisation of ALCVD Al₂O₃-ZrO₂ nanolaminates, link between electrical and structural propertiesBESLING, W. F. A; YOUNG, E; TUOMINEN, M et al.Journal of non-crystalline solids. 2002, Vol 303, Num 1, pp 123-133, issn 0022-3093Conference Paper

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Thermal stability and scalability of Zr-aluminate-based high-k gate stacksCHEN, P. J; CARTIER, E; YOUNG, E et al.Symposium on VLSI technology. 2002, pp 192-193, isbn 0-7803-7312-X, 2 p.Conference Paper